Compact model for amorphous layer thickness formed by ion implantation over wide ion implantation conditions

Abstract

In this paper, a through dose parameter /spl Phi//sub a/c/, which is defined by the dose of ions passing through the amorphous/crystal (a/c) interface, is proposed, and the use of /spl Phi//sub a/c/ combined with parameters for ion-implantation profiles to model the thickness of the amorphous layer d/sub a/ is demonstrated. It is shown that /spl Phi//sub a/c/ is independent of ion-implantation conditions but depends on the impurities. /spl Phi//sub a/c/ for Ge, Si, As, P, B, In, and Sb is evaluated. Consequently, d/sub a/ over a wide range of ion-implantation conditions for various ions was predicted.