Non‐Volatile Photochemical Gating of an Epitaxial Graphene/Polymer Heterostructure

Abstract

A novel heterostructure based on epitaxial graphene grown on silicon carbide combined with two polymers is demonstrated, with a neutral spacer and a photoactive layer that provides potent electron acceptors under UV light exposure. UV exposure of this heterostructure enables control of the electrical parameters of graphene in a non-invasive, non-volatile, and reversible way. Detailed facts of importance to specialist readers are published as ”Supporting Information”. Such documents are peer-reviewed, but not copy-edited or typeset. They are made available as submitted by the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.