Japanese Journal of Applied Physics · 1993 · 16 citations · 20 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsSolid State PhysicsThin FilmsCarbon MonoxideChemical Vapor DepositionElectron DiffractionElectronic Structure Of SolidsThin Film Electrical PropertiesAtomic Force Microscopy AnalysisElectrical PropertiesElectrical Properties AnalysisHall ConductivityHall EffectHall Effect Current MeasurementHall Effect MeasurementsReflection High-energy Electron Diffraction
The crystallinities and electrical properties of homoepitaxial diamond films grown from carbon monoxide have been investigated. The films were grown on high-pressure synthesized diamond (100) and (111) substrates by microwave plasma chemical vapor deposition, and were characterized by means of atomic force microscopy, reflection high-energy electron diffraction, cathodoluminescence, secondary electron microscopy and Hall effect measurement. The (100) films were smooth, whereas films grown on the (111) substrate became rough. The boron-doped (100) film also exhibited Hall mobility of 451 cm 2 /Vs.
20