Study of boron nitride gate insulators onto InP grown by low-temperature chemical vapor deposition

Abstract

Thin films of phosphorus-doped boron nitride have been grown onto InP, as a new gate insulator, by low-temperature chemical vapor deposition using the reaction of NH3, B2H6, and PH3. Characteristics of the pyrolytic boron nitride obtained have been investigated by ellipsometry, x-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), and conductivity measurement. The results of XPS and AES have shown that a stable and comparatively stoichiometric boron nitride film was successfully obtained, even at low temperatures (300–600 °C), by using the two-temperature zone technique. The density of interface states for the BN/InP system has been found to be about 1010 cm−2 eV−1 or less around the midgap.