Effect of switched biasing on 1/ <i>f</i> noiseand random telegraph signalsin deep-submicron MOSFETs

Abstract

Switched bias noise measurements on relatively large (&gt; 0.8 µm) n-channel MOSFETs have been reported in the literature. Measurements are presented on 0.2/0.18 µm n-channel MOSFETs the noise performance of which seems to be dominated by the effect of a small number of interface states. Switched biasing is seen to influence the dynamic behaviour of these states, and reduce the noise of the devices.