Injection currents in narrow-gap (Pb1−x SnxTe):In insulators

Abstract

The low-temperature current-voltage characteristics of narrow-gap (Pb1−x SnxTe):In have been studied experimentally and calculated for a wide range of electric fields. It is shown that the obtained data are satisfactorily described in terms of a space-charge-limited current model in the presence of traps. The concentration and energy depth of the traps have been estimated.