Resonant tunneling through a HgTe/Hg1−<i>x</i>Cd<i>x</i>Te double barrier, single quantum well heterostructure

Abstract

Resonant tunneling has been demonstrated through a double barrier, single quantum well HgTe/Hg1−xCdxTe heterostructure for the first time. Negative differential resistance is observable at room temperature, exhibiting a 1.4:1 peak to valley tunnel current ratio. The observation provides direct evidence for the existence of the proposed intrinsic interface state.