Lattice location of heavy group III and V elements implanted into Ge

Abstract

Abstract The channeling effect technique has been used to study lattice location of ion implanted Ge. Results on group III (In, Tl) and group V (Sb. Bi) elements as well as preliminary results on Pb and Hg are reported. The effect of different implantation temperatures (25–600 °C) and subsequent anneal treatment have been investigated. Comparisons with previous measurements on ion implanted Si indicate, though there is strong correlation between results in Si and Ge, main differences exist, especially for the group III dopants.