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Dishing Effects during Chemical Mechanical Polishing of Copper in Acidic Media
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2000
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EngineeringMechanical EngineeringAcidic CopperMineral ProcessingAbrasive ProcessElectrometallurgyChemical EngineeringMaterial ProcessingCorrosionCopper Dishing ReductionSurface PolishingAbrasive MachiningMaterials ScienceAcidic MediaSurface TreatmentChemical Mechanical PolishingMicrostructureCeramics MaterialsWater PurificationMetallurgical ProcessSurface ProcessingMetal Processing
Chemical mechanical polishing of copper has been conducted using as the copper etchant, benzotriazole (BTA) as the inhibitor, and γ‐alumina particles as the abrasives. The dishing effects were evaluated for the slurries containing various and BTA concentrations. Copper dishing increases dramatically with concentration in the absence of BTA. BTA reduces copper dishing significantly when BTA concentration is increased. No significant improvement in copper dishing reduction has been observed when the BTA concentration is higher than . The copper polishing process is not successful at high concentrations in the absence of BTA. However, a BTA concentration of or higher in the slurry formulation can lead to a reliable implementation of the acidic copper polishing process. © 2000 The Electrochemical Society. All rights reserved.