Alternative-precursor metalorganic chemical vapor deposition of self-organized InGaAs/GaAs quantum dots and quantum-dot lasers

Abstract

Metalorganic chemical vapor deposition of laser diodes based on triple stacks of self-organized InxGa1−xAs/GaAs quantum dots (QDs) as active medium using the alternative precursor tertiarybutylarsine (TBAs) is reported. Epitaxy of monodispersed QDs using TBAs is demonstrated. Due to the high cracking efficiency of TBAs at low temperatures, the crucial growth parameters V/III ratio and temperature can be tuned almost independently. Ridge-waveguide QD lasers show a transparency current of 29.7 A/cm2—equivalent to 9.9 A/cm2 per QD layer—an internal quantum efficiency of 91.4%, and an internal optical loss of 2.2 cm−1.