Electronics Letters · 1987 · 11 citations · 2 references
Electrical EngineeringEngineeringMicrofabricationNanoelectronicsElectronic EngineeringApplied PhysicsSelf-aligned Si MesfetsDc TransconductanceSemiconductor Device FabricationLamp-recrystallised Silicon-on-insulator MaterialsThin FilmsSilicon On InsulatorMicroelectronicsOptoelectronicsSemiconductor Device
Self-aligned Si MESFETs using tungsten for the gate have been fabricated in lamp-recrystallised silicon-on-insulator materials. Devices with gate lengths of 1.5μm exhibit a DC transconductance of 7.5 mS/mm and a calculated cutoff frequency of 3.9GHz.
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