Self-aligned Si MESFETs fabricated in thin silicon-on-insulator films

Abstract

Self-aligned Si MESFETs using tungsten for the gate have been fabricated in lamp-recrystallised silicon-on-insulator materials. Devices with gate lengths of 1.5μm exhibit a DC transconductance of 7.5 mS/mm and a calculated cutoff frequency of 3.9GHz.