Molten-salt-mediated synthesis of SiC nanowires for microwave absorption applications

Abstract

Silicon carbide (SiC) nanowires were synthesized by a reaction of multiwall carbon nanotubes (MWCNTs) and silicon vapor from molten salt medium at 1250 °C. The phase, morphology, and microstructure of the nanowires were systemically characterized by X-ray diffraction, field emission scanning electron microscopy, and high resolution transmission electron microscopy. The results revealed that the nanowires were of single-crystalline β-SiC phase with the growth direction along [111] and had diameters of 20–80 nm and lengths up to several tens of micrometers. The molten salt introduced facilitated the evaporation of Si (vapor) onto MWCNTs (solid) and the growth of SiC nanowires followed the vapor–solid process. The investigation of microwave absorbability indicated that a minimum reflection loss of −17.4 dB at 11.2 GHz could be achieved with 30 wt% SiC nanowires as the filler in the silicone matrix. The attenuation of microwave could be attributed to the dielectric loss and a possible absorption mechanism was also discussed.