Publication | Closed Access
Gettering properties of PrO2 in In0.53Ga0.47As LPE growth
21
Citations
8
References
1991
Year
Materials EngineeringMaterials ScienceIi-vi SemiconductorEngineeringIn0.53ga0.47as Lpe GrowthCrystal Growth TechnologyMolecular Beam Epitaxy
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