Publication | Closed Access
Beating of Exciton-Dressed States in a Single Semiconductor<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>InGaAs</mml:mi><mml:mo>/</mml:mo><mml:mi>GaAs</mml:mi></mml:math>Quantum Dot
50
Citations
17
References
2009
Year
Quantum PhotonicsCharge ExcitationsEngineeringSemiconductorsMath XmlnsExciton-dressed StatesQuantum MaterialsQuantum EntanglementDressed StatesBiexciton StatesQuantum SciencePhotonicsPhysicsQuantum DeviceQuantum OpticQuantum TechnologyNatural SciencesApplied PhysicsNeutral Exciton TransitionQuantum DevicesQuantum Photonic Device
We report picosecond control of excitonic dressed states in a single semiconductor quantum dot. A strong laser pulse couples the exciton and biexciton states, to form an Autler-Townes doublet of the neutral exciton transition. The Rabi-splitting, and hence the admixture of the dressed states follows the envelope of the picosecond control laser. We create a superposition of dressed states, and observe the resulting beat: a direct measurement of a Rabi oscillation in time delay rather than the usual power domain.
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