High-power operation of a wide-striped InGaN laser diode array

Abstract

We successfully demonstrated a multi-striped InGaN-based laser diode (LD) array with an optical output power of 6.3 W under continuous wave operation. The LD array was operated on a conventional metal package without any cooling system. The world highest power operation as InGaN LD array is attributed to thermally optimized layout design taking advantage of highly efficient wide-striped emitters.