Four-wave mixing in GaAs/AlGaAs semiconductor lasers

Abstract

Studies on high-efficiency four-wave mixing (FWM) in semiconductor lasers up to detuning frequencies of about 21 GHz are discussed. Population pulsations of the inverted carrier system due to nonlinear beat frequency inversion modulation are identified as the microscopic origin. A simple description of FWM in terms of frequency-modulation-induced sidebands is discussed.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>