Proceedings of the IEEE · 1967 · 18 citations · 5 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsHigh-frequency Semiconductor DevicesMicrowave AmplifiersMicrowave OscillatorsNoise In Electronic DevicesNoise In Semiconductor DevicesSemiconductor Device MaterialsDiode-based OscillatorsHigh-efficiency Power AmplifiersHigh-frequency ElectronicsImpatt Diodes
Recent results with germanium IMPATT diode oscillators are reported. Both n-p-i-p <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> and n-p structures have shown noise figures of 30 ± 1 dB when operated as amplifiers under high gain conditions in the 8 to 10 GHz range. This represents an approximate 10-dB improvement over comparable Si devices. Power outputs of 30 mW at 3 percent efficiency and 250 mW at 6 percent efficiency were measured for the n-p-i-p <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> and n-p structures, respectively.
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A Proposed High-Frequency, Negative-Resistance Diode
W. T. Read · Bell System Technical Journal · 1958 · 556 citations
Noise spectra of read diode and Gunn oscillators
J.G. Josenhans · Proceedings of the IEEE · 1966 · 62 citations