Applied Physics Letters · 2010 · 16 citations · 16 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsOptical MaterialsSemiconductor MaterialsEpitaxial GrowthIii-v SemiconductorsQuantum WellsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsEpitaxial Film GrowthHeterostructure MaterialsIntegration Of Iii-v MaterialsOptical PropertiesPhotoluminescencePhotoluminescence SpectroscopyQuantum Well HeterostructuresQuantum Well Structures
Integrating III-V semiconductors on Si is one of the major challenges of epitaxial growth and presents important applicative interest. We describe here an approach based on the use of crystalline SrTiO3 (STO)/Si templates. The structural and optical properties of InAsP/InP quantum well heterostructures grown directly on Si and on STO/Si templates are compared. Using STO/Si templates strongly improves the structural properties of the III-V heterostructure, and allows observing room-temperature photoluminescence from the quantum well.
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A Ferroelectric Oxide Made Directly on Silicon
Maitri Warusawithana, Cheng Cen, Charles R. Sleasman et al. · Science · 2009 · 392 citations