Oriented crystallization of GaSb on a patterned, amorphous Si substrate

Abstract

Oriented crystallization of GaSb on patterned, oxidized Si substrates was achieved by metalorganic chemical vapor deposition. The Si substrate was formed by patterning an array of inverted square pyramids having {111} sidewall facets, using lithography and anisotropic etching in KOH. The orientation and structure of GaSb crystals, at various stages of the growth, were examined by scanning electron microscopy and x-ray diffraction. X-ray diffraction pole figure analysis shows that {111} planes of GaSb are predominantly parallel to the {111} planes of the inverted pyramids. Extra (111) spots observed in the x-ray diffraction pole figure are interpreted in terms of multiple twinning of GaSb.