Molecular beam epitaxial growth and characteristics of 1.52μm metamorphic InAs quantum dot lasers on GaAs

Abstract

The authors report the molecular beam epitaxial growth and characteristics of 1.5μm InAs quantum dot lasers grown on GaAs utilizing both single- and multiple-step-graded InGaAs metamorphic buffer layers. 1.45μm p-doped and tunnel injection InAs metamorphic quantum dot lasers grown on a single-step In0.15Ga0.85As buffer layer exhibit an ultralow threshold current (Jth∼63A∕cm2), large T0 (620K), large modulation frequency response (f−3dB=8GHz), near-zero α parameter, a chirp of 0.1Å, and long lifetime (∼2000h). The lasing wavelength of InAs quantum dot lasers grown on multiple-step-graded InGaAs metamorphic buffer layers has also been extended, for the first time, to 1.52μm.