Microwave Plasma CVD System for the Fabrication of Thin Solid Films

Abstract

This study was concerned with the development of a process for the deposition of thin-films from a microwave plasma of semiconductor materials. A coaxial line type microwave CW discharge was used to create uniform plasmas and a-Si films were fabricated from Ar gas containing 10% SiH 4 . The X-ray diffraction patterns shown that the fabricated films, where the microwave power is large, are crystallized and the structure of the other films is amorphous.