Thermal quenching investigation in chemical vapor deposited diamond by simultaneous detection of thermally stimulated luminescence and conductivity

Abstract

Chemical vapor deposited (CVD) diamond is a very promising material that is extensively studied in many technologies. Thermally stimulated luminescence (TSL) experiments demonstrate that an important thermal quenching phenomenon occurs with microwave plasma chemical vapor deposited diamond. This phenomenon leads to a large discrepancy on the determination of electronic trap parameters. Thermally stimulated conductivity phenomenon is not affected by thermal quenching and allows an easier determination of trap parameters than TSL measurements. The difference between the two ways of computing trap energy is found to be around 4% instead of 28%, which is obtained when thermal quenching fails.