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Ohmic contact probed by dark injection space-charge-limited current measurements
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Citations
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References
2008
Year
Electrical EngineeringElectronic InstrumentationEngineeringOrganic ElectronicsNanotechnologyOhmic ContactApplied PhysicsElectric Field IntensityDark InjectionOrganic SemiconductorIndium Tin OxideInstrumentationCharge Carrier TransportCharge TransportElectrochemistry
The authors demonstrate through dark injection space-charge-limited current (DI-SCLC) and trap-free SCLC measurements that an indium tin oxide (ITO)/buckminsterfullerene (C60) electrode can form a quasi-Ohmic contact with N,N′-bis(naphthalen-1-yl)-N,N′-bis(phenyl) benzidine (NPB). The DI-SCLC results show a clear peak current along with a shift of the peak position as the field intensity varies, implying an Ohmic (or quasi-Ohmic) contact. A theoretical simulation of the SCLC also shows that ITO/C60 forms an Ohmic contact with NPB when the electric field intensity is higher than 30 kV/cm. The Ohmic contact makes it possible to estimate the NPB hole mobility through the use of both DI-SCLC and trap-free SCLC analysis.
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