Applied Physics Letters · 2013 · 20 citations · 16 references
EngineeringElectrical EngineeringPhysicsCondensed Matter PhysicsSemiconductor DevicesSemiconductor MaterialsElectronic Band StructureIii-v SemiconductorsQuantum WellsSemiconductor PhysicsWide Band Gap SemiconductorsCharge DynamicsQuasi-periodic OscillationsSemiconductor Superlattice TransportSuperlattice MaterialsSuperlattices
We have experimentally observed spontaneous quasi-periodic current self-oscillations at room temperature in a doped, weakly coupled GaAs/(Al,Ga)As superlattice (SL) with 50 periods, 7 nm well width, and 4 nm barrier width. The mole fraction of the aluminum in the barrier has been chosen to be 0.45 so that the direct barrier at the Γ point is as high as possible and thermal carrier leakage through the X valley is as small as possible. A spectral analysis of the current self-oscillations, which are observed under DC voltage bias alone, demonstrates that spontaneous quasi-periodic oscillation modes coexist with periodic ones.
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Resonant tunneling in semiconductor double barriers
L. L. Chang, L. Esaki, Raphael Tsu · Applied Physics Letters · 1974 · 1.9K citations