Physical Review B · 2010 · 109 citations · 23 references
EngineeringMaterials ScienceNanotechnologyOptoelectronicsPhotonicsElectronic Excited StatesOptical Properties Of SemiconductorsQuantum DotsQuantum OptoelectronicsSemiconductor NanomaterialsUltrafast OpticsBand GapExcitationExcitons In NanomaterialsNanoparticlesOptical Band GapTransient Absorption SpectroscopyUltrafast Carrier DynamicsUltrafast Spectroscopy
Efficient carrier multiplication in InP nanoparticles is reported; ultrafast transient absorption measurements at the band edge were used to determine the number of excitons per photoexcited nanoparticle for a range of both excitation fluences and photon energies. At photon energies greater than $2.1\ifmmode\pm\else\textpm\fi{}0.2$ times the band gap, an average of more than 1 exciton per photoexcited nanoparticle was found even in the limit of vanishing fluence. The average number of excitons generated by an absorbed photon was measured to be $1.18\ifmmode\pm\else\textpm\fi{}0.03$ for excitation photons with energies 2.6 times the band gap.
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Multiple Exciton Generation in Colloidal Silicon Nanocrystals
Matthew C. Beard, Kelly P. Knutsen, Pingrong Yu et al. · Nano Letters · 2007 · 805 citations