X-band GaAs double-drift IMPATT devices

Abstract

GaAs double-drift IMPATT devices were fabricated by liquid-phase epitaxial growth of n and p layers on an n <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> substrate. CW output power of 2.35 W with 16.3-percent efficiency at 8.9 GHz and pulse output power of 4.1 W with 20.7-percent efficiency at 10.56 GHz are reported.