Electron-Phonon Interaction in Semiconducting Layer Structures

Abstract

A new electron-phonon interaction characteristic of layer structures is described. Depending on the strength of the coupling between electron and lattice, this interaction, which involves short-range forces, leads to free or self-trapped charge carriers. The theoretical findings are compared with the experimentally determined charge-carrier mobilities in GaSe and Mo${\mathrm{S}}_{2}$.