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Sub-30nm scaling and high-speed operation of fully-confined Access-Devices for 3D crosspoint memory based on mixed-ionic-electronic-conduction (MIEC) materials
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2012
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Non-volatile MemoryEngineeringEmerging Memory TechnologyCrosspoint MemoryAdvanced Technology NodesSub-30nm ScalingPhase Change Memory3D MemoryNanoelectronicsMemory DeviceElectronic PackagingBeol-friendly Access DevicesMaterials ScienceMaterials EngineeringElectrical EngineeringSemiconductor Device FabricationCu-containing Miec MaterialsMicroelectronicsApplied PhysicsFully-confined Access-devicesSemiconductor MemoryBeyond Cmos
BEOL-friendly Access Devices (AD) based on Cu-containing MIEC materials [1-3] are shown to scale to the <;30nm CDs and <;12nm thicknesses found in advanced technology nodes. Switching speeds at the high (>100uA) currents of NVM writes can reach 15ns; NVM reads at typical (~5uA) current levels can be ≪1usec.