Quantum Galvanomagnetic Effect in<i>n</i>-Channel Silicon Inversion Layers under Strong Magnetic Fields

Abstract

The transverse conductivity components axx and axy in n-channel inversion layers on silicon (100) surfaces under strong magnetic fields up to 98 kOe applied perpendicularly to the surface are measured as functions of the gate voltage at 1.6 K. A line shape analysis based on the quantum transport theory of the two-dimensional electron system in self­ consistent Born approximation is performed for axx and a.~y- The line shape of axx is well reproduced by the theory. The overall behaviour of axy is satisfactorily explained by the theory although with some quantitative disagreements.