Journal of Physics D Applied Physics · 1996 · 34 citations · 11 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsSpectroscopySurface ScienceDefects In Electronic MaterialsEmission SpectroscopyLuminescent MaterialsRadiation Damage In MaterialsRadiation SpectroscopyRadiative ProcessesDefect Evolution Under IrradiationDefect-related LuminescenceIrradiation DamageLuminescence MechanismsRadiation DamageRadiation Damage MechanismsStructural DefectsSurface Potential
The luminescence of during and irradiation was measured in the 190 - 820 nm wavelength range. The luminescence evolution with the ion fluence exhibits two behaviours : (i) at low fluence, the amount of centres increases; (ii) at high fluences, these defects are completely (F centres) or partially ( centres) annihilated. This phenomenon results from two concomittant mechanisms : a conversion between F and defects and a destruction of both luminescent species resulting from the radiation-induced damage. By using a simple model we have determined the cross sections associated with creation and annihilation of the centres. The irradiated samples were also investigated by cathodoluminescence and Auger electron spectroscopy. A higher concentration of structural defects and centres is evidenced at the sample area previously irradiated by ions, leading to an unsteady regime of the surface potential under electron excitation.
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