Applied Physics Letters · 1992 · 75 citations · 11 references
Natural SciencesPhysicsCondensed Matter PhysicsPhotonicsSemiconductor MaterialsElectronic Band StructureOptical Properties Of SemiconductorsQuantum ConfinementQuantum DotsQuantum OptoelectronicsQuantum WellsCarrier Confinement In Quantum WellsLocalized StatesOptical Absorption In Quantum WellsQuantum Confinement EffectsQuantum Well HeterostructuresQuantum Well StructuresResonanceTransmission-line Resonance
The observation of electronic states localized in a quantum well at energies greater than the barrier height is reported. In our GaInAs wells quantum confinement is achieved at an energy corresponding to a continuum transmission resonance using as barriers high reflectivity AlInAs/GaInAs quarter-wave stacks. The latter strongly narrow the resonance, thus forming a high finesse Fabry–Perot electron filter. Intersubband infrared absorption measurements at 300 K reveal a strong narrowing of the transition to a localized state above the well as the number of periods in the λ/4 stacks is increased. The narrowest absorption peaks exhibit widths equal to those of bound-to-bound state transitions in GaInAs wells with thick AlInAs barriers.
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Resonant tunneling in semiconductor double barriers
L. L. Chang, L. Esaki, Raphael Tsu · Applied Physics Letters · 1974 · 1.9K citations
Observation of an electronic bound state above a potential well
Federico Capasso, Carlo Sirtori, Jérôme Faist et al. · Nature · 1992 · 331 citations
Natural Sciences, Chemistry, Physics +11