Publication | Closed Access
Influence of heterointerface atomic structure and defects on second-harmonic generation
41
Citations
15
References
1992
Year
EngineeringIi-vi SemiconductorSecond-harmonic SpectroscopyOptical PropertiesCompound SemiconductorMaterials ScienceElectrical EngineeringPhysicsNon-linear OpticAtomic PhysicsDefect FormationSecond-harmonic GenerationQuantum ChemistryTransition Metal ChalcogenidesBuried SurfaceLattice RelaxationNatural SciencesApplied PhysicsCondensed Matter PhysicsMultilayer HeterostructuresOptoelectronics
Second-harmonic spectroscopy is shown to be sensitive to interfacial electronic traps, lattice relaxation and buried surface reconstruction in ZnSe/GaAs(001) heterostructures. Newly developed photomodulation-second-harmonic-generation experiments reveal that the interfacial region contains predominantly hole traps, and that the density of these traps is substantially lower for 3\ifmmode\times\else\texttimes\fi{}1 buried surface reconstructed samples.
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