Silicon Contamination of InP Synthesized under High Phosphorus Pressure

Abstract

An experimental study has been made of processes causing Si contamination of polycrystalline synthesized under high phosphorus pressure (∼30 atm) via the horizontal Bridgman technique. Silicon content of the grown ingots was determined by measurement of carrier concentrations and by spark source mass spectrometry. The Si content increased by about two orders of magnitude when the maximum temperature in the indium melt was varied from 1050° to 1180°C. The Si content scarcely depended on phosphorus pressure in the range of 5–30 atm. Presence of indium oxides in the indium melt was found to lower the incorporated Si content. As a result of these investigations, high purity (, ) was reproducibly obtained by using a quartz boat at a growth rate of 3 mm/hr. The effective distribution coefficient for Si in was determined to be 0.53 by the analysis of intentionally Si‐doped ingots.