State-of-the-Art AlGaN/GaN-on-Si Heterojunction Field Effect Transistors with Dual Field Plates

Abstract

We have demonstrated state-of-the-art characteristics of AlGaN/GaN-on-Si heterojunction field effect transistors (HFETs) employing dual field plates. Both gate and drain field plate lengths were optimized in order to maximize the breakdown voltage. Great care was taken not only to optimize the field plate lengths but also to develop processing technologies such as mesa-first prepassivation, a recessed ohmic contact, and a sloped gate. A breakdown voltage of 1590 V with a specific on-resistance of 1.86 mΩ cm2 was achieved for the gate-to-drain distance of 15 µm in which the gate and drain field plate lengths were 2 and 1 µm, respectively.