InP/InGaAs uni-travelling-carrier photodiode with310 GHz bandwidth

Abstract

The authors have fabricated an InP/InGaAs uni-travelling-carrier photodiode that exhibits a 3 dB bandwidth of 310 GHz and a pulse width (FWHM) of 0.97 ps, both of which are record values for photodetectors operating at a wavelength of 1.55 µm. The average electron velocity in the depletion region is estimated to be 3.0 × 107 cm/s.