Electronics Letters · 2000 · 258 citations · 2 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor DevicesCarrier TransportDetector TechnologyHigh-frequency Semiconductor DevicesPhotodetectorsSemiconductor DetectorsSemiconductor HeterostructuresBandwidthDepletion RegionHigh-speed PhotodetectionPhotodetector BandwidthPhotodetector MaterialsPhotodiodesRecord Values
The authors have fabricated an InP/InGaAs uni-travelling-carrier photodiode that exhibits a 3 dB bandwidth of 310 GHz and a pulse width (FWHM) of 0.97 ps, both of which are record values for photodetectors operating at a wavelength of 1.55 µm. The average electron velocity in the depletion region is estimated to be 3.0 × 107 cm/s.
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InP/InGaAs uni-travelling-carrier photodiode with220 GHz bandwidth
Hiroshi Itô, Tadaomi Furuta, Satoshi Kodama et al. · Electronics Letters · 1999 · 54 citations
Electron transport in InP at high electric fields
T. H. Windhorn, L. W. Cook, M. A. Haase et al. · Applied Physics Letters · 1983 · 46 citations