Publication | Closed Access
Heteroepitaxy of Ge1−<i>x</i>Si<i>x</i> on Si by transient heating of Ge-coated Si substrates
16
Citations
6
References
1980
Year
EngineeringGe1−xsix AlloysOptoelectronic DevicesSilicon On InsulatorSemiconductorsNanoelectronicsMolecular Beam EpitaxyEpitaxial GrowthGraphite Strip HeaterMaterials ScienceMaterials EngineeringElectrical EngineeringSemiconductor MaterialSemiconductor Device FabricationMicroelectronicsTransient HeatingElectronic MaterialsGe-coated Si SubstratesSurface ScienceApplied PhysicsMultilayer HeterostructuresThin Films
Heteroepitaxial films of Ge1−xSix alloys have been obtained by transient heating of Ge-coated Si single-crystal substrates with a graphite strip heater. Structural characterization shows the films to be of good epitaxial quality. As the maximum temperature during heating is increased, the Ge content and the microtwin density of the films decrease.
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