Low‐Temperature Deterministic Growth of Ge Nanowires Using Cu Solid Catalysts

Abstract

Cu-Catalytic Growth of Ge Nanowires: Low temperature, deterministic growth characteristics are available by the Cu-catalytic growth. The low-temperature growth is accessible at as low as 200 °C on polymer substrates, and the epitaxial growth is also possible on single-crystalline substrates with the narrow diameter distribution of 7 nm, directly templated from those of Cu catalysts. Detailed facts of importance to specialist readers are published as ”Supporting Information”. Such documents are peer-reviewed, but not copy-edited or typeset. They are made available as submitted by the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.