Applied Physics Letters · 1996 · 26 citations · 0 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsSemiconductor MaterialsSolid State PhysicsDefects In Electronic MaterialsSemiconductor Crystal GrowthSemiconductor Device MaterialsSemiconductor NanomaterialsSemiconductor PhysicsHeat Treatment EffectsMolecular Beam EpitaxyNanostructured Optoelectronic MaterialsStripe PatternsSuperlattice GrowthSuperlattice MaterialsSuperlatticesZinc Sulfides
Thermally induced disordering of ZnCdSe/ZnSe superlattices was studied by secondary-ion-mass-spectroscopy and cathodoluminescence. The structures were grown by molecular beam epitaxy and annealed in Zn, H2, or Se atmosphere. In Zn atmosphere the superlattice was found to be stable up to 500 °C, whereas a heat treatment in H2 and Se atmosphere leads to a complete intermixing at temperatures of 450 and 430 °C, respectively. A Si3N4 stripe was used to protect the superlattice locally from the annealing atmosphere and to achieve a laterally structured intermixing. The disordering area is controlled to better than 600 nm.