New Photoresist for High Resolution Two-Layer Resist Systems

Abstract

We propose a new photoresist MSNR (Methacrylated Silicone-based Negative Resist) for high resolution two-layer resist systems. This photoresist shows high sensitivity to near-UV light (350–450 nm), D 0.5 =40 mJ/cm 2 , and excellent resistance to reactive ion etching under oxygen gas. A submicron (0.7 µm) patterns with a high aspect ratio can be easily fabricated with MSNR/AZ two-layer resist systems using near-UV lithography.