Epitaxial nature and anisotropic dielectric properties of (Pb,Sr)TiO3 thin films on NdGaO3 substrates

Abstract

Epitaxial behavior of (Pb,Sr)TiO3 thin films on (110) NdGaO3 substrates fabricated in different conditions have been investigated using high resolution x-ray diffraction and characterized with interdigital dielectric measurement. A slow cooling results in films with a-axis normal to the surface (a-axis growth), whereas a fast cooling leads to growth of c-axis oriented films. The dielectric properties of the films prepared under different cooling rates are closely related to the crystalline structure of the films.