Optical and electronic structure of quasi-freestanding multilayer graphene on the carbon face of SiC

Abstract

We report the optical and electronic properties of multilayer graphene films grown epitaxially on the carbon face (C-face) of 4H-SiC probed using spectroscopic ellipsometry (SE) and angle-resolved photoemission spectroscopy (ARPES). The optical conductivity in the energy range from 1.0 to 5.3 eV extracted from SE reveals two important features: the presence of universal conductivity at the near-infrared region and asymmetric resonant excitons at 4.5 eV. Furthermore, ARPES shows the presence of independent linear electronic dispersion. These features resemble quasi-freestanding properties of multilayer graphene grown on the C-face of SiC.