Memory Operation of Silicon Quantum-Dot Floating-Gate Metal-Oxide-Semiconductor Field-Effect Transistors

Abstract

The drain current versus gate voltage characteristics of metal-oxide-semiconductor field-effect transistors (MOSFETs) with a silicon quantum-dot (QD) layer floating gate have shown the unique hysteresis and current bumps which arise from the electron charging or discharging of the QDs with an average dot height of 5 nm. The drain current response to application of a single-pulse gate bias has revealed that the multiple-step charging of the QD layer occurs until single electron occupation at each QD is achieved.