New reverse-conducting IGBT (1200V) with revolutionary compact package

Abstract

Fuji Electric developed a 1200V class RC-IGBT based on our latest thin wafer process. The performance of this RC-IGBT shows the same relationship between conduction loss and switching loss as our 6 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sup> generation conventional IGBT and FWD. In addition its trade-off can be optimized for hard switching by lifetime killer. Calculations of the hard switching inverter loss and chip junction temperature (Tj) show that the optimized RC-IGBT can handle 35% larger current density per chip area. In order to utilize the high performance characteristics of the RC-IGBT, we assembled them in our newly developed compact package. This module can handle 58% higher current than conventional 100A modules at a 51% smaller footprint.