Efficient Schottky-like junction GaAs nanowire photodetector with 9 GHz modulation bandwidth with large active area

Abstract

Efficient, low capacitance density GaAs/Indium-Tin-Oxide Schottky-like junction photodetectors with a 50 μm square active are fabricated for operation in the gigahertz range. Modulation bandwidth is experimentally measured up to 10 GHz at various applied reverse biases and optical intensities to explore the effects of photo-generated carrier screening on modulation bandwidth. Last, the bandwidth dependence on applied reverse bias and optical intensity is simulated as a means to quantify average carrier velocities in nanowire material systems.