Applied Physics Letters · 2003 · 44 citations · 8 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsPhase TransformationsSemiconductor MaterialsKinetics Of Phase TransformationsLaser PhysicsMelting Behavior AnalysisOptical Properties Of SemiconductorsOptical Properties Of SolidsThermal Properties Of SemiconductorsAblation ThresholdsHeat EquationLaser Pulse DurationMelting Of Crystalline MaterialsReflectivitySolid-liquid Phase TransitionSurface TemperatureSurface Temperature Analysis
Phase transitions in CdTe crystals irradiated with nanosecond KrF (248 nm) excimer laser pulses were investigated by a numerical simulation and time-resolved reflectivity method. By solving the time-dependent heat flow equation and taking into account the temperature dependences of semiconductor parameters, the time dependence of the surface temperature in a CdTe crystal was calculated as a function of laser pulse intensity. The dynamics of laser-induced melting was directly monitored by measurements of the reflection coefficient of a probe laser beam (532 nm). The melting and ablation thresholds have been determined as 2.5 and 7.3 MW/cm2, respectively.
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Excimer laser doping techniques for II–VI semiconductors
Yoshinori Hatanaka, M. Niraula, Atsushi Nakamura et al. · Applied Surface Science · 2001 · 46 citations