Applied Physics Letters · 1986 · 178 citations · 13 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsCrystal GrowthEpitaxial GrowthOptical Properties Of SemiconductorsSemiconductor Crystal GrowthSemiconductor Device MaterialsSemiconductor PhysicsAnnealingCrystalline StructureEpitaxial MaterialsMolecular Beam EpitaxyPhotoluminescenceRapid Thermal AnnealingThermal AnnealingThermal Annealing Effects
Rapid thermal annealing (RTA) has been found to significantly improve the crystalline quality of epitaxial GaAs grown on Si (100) substrates. After RTA at 900 °C for 10 s, the percentage of displaced atoms near the GaAs/Si interface, as estimated by Rutherford backscattering/channeling, decreased from 20 to 7%. Photoluminescence intensity (PL) after RTA increased significantly (as much as sixfold in some cases), with the actual increase varying from sample to sample and with annealing conditions. In some cases, the PL intensity after RTA was comparable to the PL intensity obtained from GaAs grown on GaAs substrate under similar conditions. Rapid thermal annealing at 940 °C resulted in a degradation of the PL intensity as compared to annealing at 900 °C. Also, the PL peaks after RTA were found to shift to lower energies by 2–5 meV at low temperatures.
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Dislocation reduction in epitaxial GaAs on Si(100)
R. Fischer, D. Neuman, H. Zabel et al. · Applied Physics Letters · 1986 · 198 citations
GaAs bipolar transistors grown on (100) Si substrates by molecular beam epitaxy
R. Fischer, Navin Chand, W. Kopp et al. · Applied Physics Letters · 1985 · 122 citations