Semiconductor Science and Technology · 2005 · 44 citations · 23 references
Natural SciencesChemistryMaterials ScienceElectrochemistrySemiconductor MaterialsThin FilmsElectrode MaterialsMetal Oxide NanomaterialsMetal OxidesNanoporous MaterialsOxide SemiconductorsPorous MaterialsBand GapCurrent DensityElectrochemical DepositionElectrodepositionFilm MorphologySpecific Surface AreaThin-film MorphologyZinc Oxides
Ordered porous ZnO films were electrodeposited on an ITO glass substrate covered with PS array templates by using a zinc nitrate aqueous solution as the electrolyte. The electrochemical deposition process was analysed and the characteristics of the porous films were discussed. The results showed that Zn2+ had an analogous catalysis to NO−3 during the nucleation-growth process of ZnO, and its concentration had an important effect on the current density, growth rate and the film morphology. Deposition temperature also had a relation with the induction period time and film morphology. The porous film prepared at 0.1 M Zn(NO3)2, −1.1 V potential and 70 °C was a hexagonal wurtzite structure. The approximate specific surface area was 2.76 m2 g−1. The optical transmittance spectrum gave a relatively high transmittance of 60% beyond 500 nm, and the optical band-gap of the ZnO film was 3.36 eV.
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Sol-gel-derived c-axis oriented ZnO thin films
Dinghua Bao, Haoshuang Gu, Anxiang Kuang · Thin Solid Films · 1998 · 372 citations
Natural Sciences, Materials Engineering, Materials Science +14