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Experimental determination of valence band offset at PbTe/CdTe(111) heterojunction interface by x-ray photoelectron spectroscopy
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Citations
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References
2008
Year
EngineeringChemistryElectronic StructureSemiconductor NanostructuresSemiconductorsIi-vi SemiconductorQuantum MaterialsValence BandCompound SemiconductorLattice-matched Pbte/cdteValence Band OffsetCrystalline DefectsPhysicsConduction Band OffsetSemiconductor MaterialNatural SciencesHeterojunction InterfaceApplied PhysicsCondensed Matter PhysicsX-ray Photoelectron Spectroscopy
Lattice-matched PbTe/CdTe(111) heterojunction interfaces were studied using x-ray photoelectron spectroscopy. A type-I band alignment with a valence band offset of ΔEV=0.135±0.05 eV and a conduction band offset of ΔEC=1.145±0.05 eV is concluded. Within experimental error the determined valence band offset is in agreement with theoretical prediction by inclusion of spin-orbit interaction.
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