Publication | Open Access
Bulk mixed ion electron conduction in amorphous gallium oxide causes memristive behaviour
163
Citations
43
References
2014
Year
Electrical EngineeringEngineeringOxide ElectronicsApplied PhysicsCondensed Matter PhysicsAmorphous Gallium OxideSemiconductor MaterialGallium OxideAmorphous SolidMemristive BehaviourPhase Change Memory
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