Publication | Open Access
Utilization of sputter depth profiling for the determination of band alignment at polycrystalline CdTe/CdS heterointerfaces
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Citations
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References
2002
Year
EngineeringSemiconductor MaterialsStepwise Cdte DepositionOptoelectronic DevicesPhotovoltaicsSemiconductor NanostructuresSemiconductorsIi-vi SemiconductorElectronic DevicesSolar Cell StructuresSputter DepthPolycrystalline Cdte/cds HeterointerfacesCompound SemiconductorThin Film ProcessingMaterials ScienceElectrical EngineeringSemiconductor MaterialBand AlignmentPhotoelectron SpectroscopySurface ScienceApplied PhysicsThin FilmsSolar CellsSolar Cell Materials
The band alignment at polycrystalline CdS/CdTe heterointerfaces for thin-film solar cells is determined by photoelectron spectroscopy from stepwise CdTe deposition on polycrystalline CdS substrates and from subsequent sputter depth profiling. Identical values of 0.94±0.05 eV for the valence band offset are obtained.
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